- 专利标题： Semiconductor device including a substrate contact plug and manufacturing method thereof
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申请号： US15908597申请日： 2018-02-28
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公开(公告)号： US10546802B2公开(公告)日： 2020-01-28
- 发明人: Hiroaki Sekikawa , Shigeo Tokumitsu , Asuka Komuro
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Shapiro, Gabor and Rosenberger, PLLC
- 优先权： JP2017-044587 20170309
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L29/06 ; H01L21/768 ; H01L21/762 ; H01L23/522 ; H01L27/092
摘要：
A substrate contact plug which is connected to a wiring and a semiconductor substrate and does not form a circuit is formed in a seal ring region in a peripheral portion of a semiconductor chip region. The substrate contact plug is buried in a trench which is deeper than an element isolation trench.
公开/授权文献
- US20180261530A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2018-09-13
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