- 专利标题： Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
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申请号： US15996748申请日： 2018-06-04
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公开(公告)号： US10546787B2公开(公告)日： 2020-01-28
- 发明人: Ruqiang Bao , Vijay Narayanan , Terence B. Hook , Hemanth Jagannathan
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L21/02 ; H01L21/324 ; H01L21/225 ; H01L27/092 ; H01L29/10 ; H01L29/51 ; H01L21/027 ; H01L21/311
摘要：
A semiconductor device including pairs of multiple threshold voltage (Vt) devices includes at least a first region corresponding to a first pair of Vt devices, a second region corresponding to a second pair of Vt devices including a first dipole layer, and a third region corresponding to a third pair of Vt devices including a second dipole layer different from the first dipole layer.
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