- 专利标题: Optical sensor device with deep and shallow control electrodes
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申请号: US15783062申请日: 2017-10-13
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公开(公告)号: US10545225B2公开(公告)日: 2020-01-28
- 发明人: Stefano Parascandola , Henning Feick , Matthias Franke , Dirk Offenberg , Jens Prima , Robert Roessler , Michael Sommer
- 申请人: Infineon Technologies AG , pmdtechnologies ag
- 申请人地址: DE DE
- 专利权人: Infineon Technologies AG,pmdtechnologies ag
- 当前专利权人: Infineon Technologies AG,pmdtechnologies ag
- 当前专利权人地址: DE DE
- 代理机构: Design IP
- 优先权: DE102016220164 20161014; DE102016223568 20161128
- 主分类号: H04N13/257
- IPC分类号: H04N13/257 ; H01L27/146 ; G01S17/36
摘要:
An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.
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