- 专利标题： Semiconductor device including stack structures having R-type pad and P-type pad of different thickness
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申请号： US16136474申请日： 2018-09-20
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公开(公告)号： US10535679B2公开(公告)日： 2020-01-14
- 发明人: Seok Cheon Baek , Boh Chang Kim , Chung Ki Min , Ji Hoon Park , Byung Kwan You
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Law, PLLC
- 优先权： KR10-2018-0035781 20180328
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L29/423 ; H01L23/00
摘要：
A semiconductor device includes lower gate electrodes placed on a substrate and spaced apart from one another; upper gate electrodes placed over the lower gate electrodes and spaced apart from one another; an R-type pad extending from one end of at least one electrode among the lower gate electrodes or the upper gate electrodes and having a greater thickness than the lower gate electrode or upper gate electrode connected to the R-type pad; and a P-type pad extending from one end of at least one electrode to which the R-type pad is not connected among the lower gate electrodes or the upper gate electrodes and having a different thickness than the R-type pad, wherein the P-type pad includes a first pad connected to an uppermost lower gate electrode among the lower gate electrodes.
公开/授权文献
- US20190304992A1 SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURES 公开/授权日：2019-10-03
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