- 专利标题: Second semiconductor wafer attached to a first semiconductor wafer with a through hole connected to an inductor
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申请号: US16009579申请日: 2018-06-15
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公开(公告)号: US10535635B2公开(公告)日: 2020-01-14
- 发明人: Chih-Lin Chen , Chin-Chou Liu , Fong-Yuan Chang , Hui-Yu Lee , Po-Hsiang Huang
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; H01L23/34 ; H01L21/00 ; H01L25/065 ; H01L49/02 ; H01L23/48 ; H01L23/522 ; H01L23/00 ; H01L21/768 ; H01L25/00 ; H01L23/538 ; H01L23/528
摘要:
An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, a second interconnect structure and a through substrate via. The first semiconductor wafer has a first device in a front side of the first semiconductor wafer. The second semiconductor wafer is bonded to the first semiconductor wafer. The first interconnect structure is below a backside of the first semiconductor wafer. The inductor is below the first semiconductor wafer, and at least a portion of the inductor is within the first interconnect structure. The second interconnect structure is on the front side of the first semiconductor wafer. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by the second interconnect structure and the through substrate via.
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