- 专利标题： Method of manufacturing semiconductor structure
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申请号： US16229585申请日： 2018-12-21
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公开(公告)号： US10535629B2公开(公告)日： 2020-01-14
- 发明人: Alexander Kalnitsky , Yi-Yang Lei , Hsi-Ching Wang , Cheng-Yu Kuo , Tsung Lung Huang , Ching-Hua Hsieh , Chung-Shi Liu , Chen-Hua Yu , Chin-Yu Ku , De-Dui Liao , Kuo-Chio Liu , Kai-Di Wu , Kuo-Pin Chang , Sheng-Pin Yang , Isaac Huang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： H01L21/683
- IPC分类号： H01L21/683 ; H01L23/00 ; H01L21/78
摘要：
A method of manufacturing a semiconductor structure includes receiving a first substrate including an IMD layer disposed over the first substrate and a plurality of conductive bumps disposed in the IMD layer; receiving a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the IMD layer is exposed through the patterned adhesive; and bonding the first substrate with the second substrate, wherein a top surface of the at least portion of the IMD layer is exposed through the patterned adhesive after bonding the first substrate with the second substrate.
公开/授权文献
- US20190115313A1 METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE 公开/授权日：2019-04-18
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