- 专利标题: Conductive base embedded interconnect
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申请号: US15776402申请日: 2015-12-26
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公开(公告)号: US10535595B2公开(公告)日: 2020-01-14
- 发明人: Robert L. Sankman , Adel A. Elsherbini
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt P.C.
- 国际申请: PCT/US2015/000398 WO 20151226
- 国际公布: WO2017/111840 WO 20170629
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L23/498 ; H01L25/065 ; H01L23/538 ; H01L23/00
摘要:
Embodiments are generally directed to a conductive base embedded interconnect. An embodiment of an apparatus includes a substrate; an embedded interconnect layer in a first side of the substrate, the embedded interconnect layer including a plurality of contacts; and one or more conductive paths through the substrate, the one or more conductive paths being connected with the embedded interconnect layers.
公开/授权文献
- US20180301405A1 CONDUCTIVE BASE EMBEDDED INTERCONNECT 公开/授权日:2018-10-18
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