Techniques are provided for sensing a memory cell configured to store three or more states. A charge may be transferred between a digit line and a node coupled with a sense component using a charge transfer device. During a single read operation, multiple voltages may be applied to the gate of the charge transfer device. The node may be sensed a number of times based on a number of voltages applied to the gate of the charge transfer device. The charge may be transferred by the charge transfer device based on a value of the signal on a digit line and a voltage applied to the gate of the charge transfer device. Based on the charge being transferred and the sense component sensing the node multiple times, a logic state associated with the memory cell may be determined.