- 专利标题： GAA FET with u-shaped channel
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申请号： US15628243申请日： 2017-06-20
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公开(公告)号： US10510840B2公开(公告)日： 2019-12-17
- 发明人: Jie-Cheng Deng , Yi-Jen Chen , Chia-Yang Liao
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L29/49 ; H01H29/06 ; H01L29/775 ; H01L29/06 ; B82Y10/00 ; H01L29/786
摘要：
A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.
公开/授权文献
- US20180366545A1 GAA FET WITH U-SHAPED CHANNEL 公开/授权日：2018-12-20
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