- 专利标题： Embedded nonvolatile memory and forming method thereof
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申请号： US15607337申请日： 2017-05-26
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公开(公告)号： US10510763B2公开(公告)日： 2019-12-17
- 发明人: Chang-Ming Wu , Wei-Cheng Wu , Yuan-Tai Tseng , Shih-Chang Liu , Chia-Shiung Tsai , Ru-Liang Lee , Harry Hak-Lay Chuang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L27/11521
- IPC分类号： H01L27/11521 ; H01L21/28 ; H01L21/3213 ; H01L21/02 ; H01L21/311 ; H01L21/3205 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/788 ; H01L21/768 ; H01L23/528 ; H01L23/532
摘要：
A nonvolatile memory embedded in an advanced logic circuit and a method forming the same are provided. In the nonvolatile memory, the word lines and erase gates have top surfaces lower than the top surfaces of the control gate. In addition, the word lines and the erase gates are surrounded by dielectric material before a self-aligned silicidation process is performed. Therefore, no metal silicide can be formed on the word lines and the erase gate to produce problems of short circuit and current leakage in a later chemical mechanical polishing process.
公开/授权文献
- US20170263616A1 EMBEDDED NONVOLATILE MEMORY AND FORMING METHOD THEREOF 公开/授权日：2017-09-14
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