发明授权
- 专利标题： Vertically oriented metal silicide containing e-fuse device and methods of making same
-
申请号： US15805282申请日： 2017-11-07
-
公开(公告)号： US10510662B2公开(公告)日： 2019-12-17
- 发明人: Chun Yu Wong , Kwan-Yong Lim , Seong Yeol Mun , Jagar Singh , Hui Zang
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L23/525 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L23/528 ; H01L21/3105
摘要：
One illustrative method disclosed herein comprises forming a vertically oriented semiconductor (VOS) structure in a semiconductor substrate and performing a metal silicide formation process to convert at least a portion of the VOS structure into a metal silicide material, thereby forming a conductive silicide vertically oriented e-fuse.
公开/授权文献
信息查询
IPC分类:
