- 专利标题： Method of manufacturing semiconductor device packaging structure having through interposer vias and through substrate vias
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申请号： US16025440申请日： 2018-07-02
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公开(公告)号： US10510650B2公开(公告)日： 2019-12-17
- 发明人: Chen-Hua Yu , Sung-Feng Yeh , Ming-Fa Chen , Hsien-Wei Chen , Tzuan-Horng Liu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L25/00 ; H01L21/56 ; H01L23/00 ; H01L21/48 ; H01L21/768
摘要：
A semiconductor device and method of manufacture are presented in which a first semiconductor device and second semiconductor device are bonded to a first wafer and then singulated to form a first package and a second package. The first package and second package are then encapsulated with through interposer vias, and a redistribution structure is formed over the encapsulant. A separate package is bonded to the through interposer vias.
公开/授权文献
- US20190244947A1 Semiconductor Device and Method of Manufacture 公开/授权日：2019-08-08
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