- 专利标题: Devices and methods for heat dissipation of semiconductor integrated circuits
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申请号: US15883462申请日: 2018-01-30
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公开(公告)号: US10510637B2公开(公告)日: 2019-12-17
- 发明人: Chung-Chieh Yang , Yung-Chow Peng , Chung-Peng Hsieh , Sa-Lly Liu
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L23/34 ; H01L23/64 ; H01L23/552 ; H01L23/522 ; H01L49/02
摘要:
A semiconductor device is disclosed. In one example, the semiconductor device includes: an electronic component having a top surface, a bottom surface, and two end portions; a plurality of contacts disposed on the top surface; and a plurality of metal nodes disposed on the plurality of contacts. The plurality of contacts includes two end contacts disposed at the two end portions respectively and at least one intermediate contact disposed between the two end contacts. The plurality of metal nodes includes two end metal nodes disposed on the two end contacts respectively and at least one intermediate metal node disposed on the at least one intermediate contact.
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