- 专利标题： FinFET devices and methods of forming the same
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申请号： US15364038申请日： 2016-11-29
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公开(公告)号： US10510615B2公开(公告)日： 2019-12-17
- 发明人: Tzu-Chan Weng , Wan-Chun Kuan , Yi-Wei Chiu , Meng-Je Chuang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/3105 ; H01L21/311 ; H01L21/67 ; H01L21/762
摘要：
A method of manufacturing a semiconductor device includes forming a semiconductor strip protruding above a substrate, forming isolation regions on opposing sides of the semiconductor strip, recessing the isolation regions in a first chamber using a first etching process, and increasing a planarity of the isolation regions in the first chamber using a second etching process.
公开/授权文献
- US20180151446A1 FINFET DEVICES AND METHODS OF FORMING THE SAME 公开/授权日：2018-05-31
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