- 专利标题: Electronic device, thin film transistor, array substrate and manufacturing method thereof
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申请号: US15553695申请日: 2017-02-10
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公开(公告)号: US10510558B2公开(公告)日: 2019-12-17
- 发明人: Meili Wang
- 申请人: BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址: CN Beijing
- 专利权人: BOE Technology Group Co., Ltd.
- 当前专利权人: BOE Technology Group Co., Ltd.
- 当前专利权人地址: CN Beijing
- 代理机构: Collard & Roe, P.C.
- 优先权: CN201610365811 20160527
- 国际申请: PCT/CN2017/073228 WO 20170210
- 国际公布: WO2017/202057 WO 20171130
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L21/02 ; H01L21/223 ; H05K1/09 ; H05K3/00 ; H05K3/06
摘要:
Disclosed are an electronic device and the manufacturing method thereof, a manufacturing method of a thin film transistor, and an array substrate and manufacturing method thereof. The manufacturing method of an electronic device includes: forming a metallic structure on a base substrate; forming an oxygen-free insulating layer on the metallic structure and the base substrate; and forming an insulating protective layer on the oxygen-free insulating layer. The manufacturing method of the electronic device protects a metallic structure by forming an oxygen-free insulating layer, not containing oxygen elements, on the metallic structure, and hence prevents the metallic structure from being oxidized.
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