- 专利标题: Semiconductor device, manufacturing method thereof, and electronic apparatus
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申请号: US15482580申请日: 2017-04-07
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公开(公告)号: US10438985B2公开(公告)日: 2019-10-08
- 发明人: Hiroshi Takahashi , Taku Umebayashi
- 申请人: Sony Corporation
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sheridan Ross P.C.
- 优先权: JP2009-249327 20091029
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L21/768 ; H01L23/48 ; H01L23/00 ; H01L31/02 ; H01L31/0203 ; H01L31/0232 ; H01L31/18 ; H01L21/762
摘要:
A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.
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