A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer onto the first aluminum layer; depositing a second aluminum layer onto the first titanium interlayer; applying an etching process so that a plurality of trenches are formed so as to expose a plurality of top surfaces of a dielectric layer; and applying a singulation process so as to form a plurality of separated semiconductor devices.