Silicon-based OLED image transceiving device and manufacture method thereof
摘要:
A silicon-based OLED image transceiving device includes a substrate, multiple photodiodes for sensing light, and multiple OLEDs for emitting light. The OLED includes a metal interconnect anode, a hole transport layer, an organic light emitting layer, an electronic transport layer, and a transparent cathode layer. The hole transport layer, the organic light emitting layer, the electronic transport layer, and the transparent cathode layer are sequentially formed on the metal interconnect anode. The organic light emitting layer is only located on an area corresponding to the metal interconnect anode, and does not extend to an area corresponding to the photodiode. The multiple photodiodes and organic light emitting layers of the multiple OLEDs are arranged to form a pixel matrix of the image transceiving device. The silicon-based OLED image transceiving device has relatively high sensitivity of the photodiode.
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