- 专利标题： Lateral avalanche photodetector
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申请号： US16168249申请日： 2018-10-23
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公开(公告)号： US10411149B2公开(公告)日： 2019-09-10
- 发明人: Ari Novack , Yang Liu , Yi Zhang
- 申请人： Elenion Technologies, LLC
- 申请人地址： US NY New York
- 专利权人： Elenion Technologies, LLC
- 当前专利权人： Elenion Technologies, LLC
- 当前专利权人地址： US NY New York
- 代理机构： Stratford Managers Corporation
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; H01L31/028 ; H01L31/0352 ; H01L31/0232 ; H01L31/18
摘要：
A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.
公开/授权文献
- US20190051784A1 LATERAL Ge/Si AVALANCHE PHOTODETECTOR 公开/授权日：2019-02-14
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