发明授权
- 专利标题： P-N junction based devices with single species impurity for P-type and N-type doping
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申请号： US16049027申请日： 2018-07-30
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公开(公告)号： US10411101B1公开(公告)日： 2019-09-10
- 发明人: Guy M. Cohen , Paul M. Solomon , Christian Lavoie
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/36 ; H01L29/737 ; H01L29/732 ; H01L29/08 ; H01L29/10 ; H01L21/02
摘要：
A technique relates to a semiconductor device. A bipolar transistor includes an emitter layer and a base layer, where the emitter layer and the base layer are doped with an impurity, the impurity being a same for the emitter and base layers. The bipolar transistor includes a collector layer.
公开/授权文献
- US1876207A Card index 公开/授权日：1932-09-06
信息查询
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