- 专利标题： Semiconductor devices and methods of manufacturing the same
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申请号： US15970450申请日： 2018-05-03
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公开(公告)号： US10403754B2公开(公告)日： 2019-09-03
- 发明人: Sung-Dae Suk , Sunhom Steve Paak , Yeon-Ho Park , Dong-Ho Cha
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel, P.A.
- 优先权： KR10-2015-0081701 20150610
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L29/417 ; H01L29/66
摘要：
Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.
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