- 专利标题: Unit pixel of image sensor, image sensor including the same and method of manufacturing image sensor
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申请号: US15905007申请日: 2018-02-26
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公开(公告)号: US10396119B2公开(公告)日: 2019-08-27
- 发明人: Yong-Chan Kim , Seung-Sik Kim , Eun-Sub Shim , Moo-Sup Lim
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2014-0029839 20140313; KR10-2014-0035348 20140326; KR10-2014-0046109 20140417
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L27/148 ; H04N5/355
摘要:
Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.
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