- 专利标题： Semiconductor device
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申请号： US16038821申请日： 2018-07-18
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公开(公告)号： US10388780B1公开(公告)日： 2019-08-20
- 发明人: Tomotaka Narita
- 申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址： JP Minato-ku JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址： JP Minato-ku JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2018-027180 20180219
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423 ; H01L29/08 ; H01L29/267 ; H01L29/417
摘要：
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a second electrode, and a first layer. The first layer includes at least one selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride. The first layer includes a first portion, a second portion, and a third portion. The first portion is provided on the second electrode. The second portion is provided on the first portion. A content of silicon of the second portion is higher than a content of silicon of the first portion. A third portion is provided on the second portion. A content of silicon of the third portion is lower than the content of silicon of the second portion.
公开/授权文献
- US20190259867A1 SEMICONDUCTOR DEVICE 公开/授权日：2019-08-22
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