- 专利标题： Semiconductor device and method for forming n-type conductive channel in diamond using heterojunction
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申请号： US15796265申请日： 2017-10-27
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公开(公告)号： US10388751B2公开(公告)日： 2019-08-20
- 发明人: Jingjing Wang , Zhihong Feng , Cui Yu , Chuangjie Zhou , Qingbin Liu , Zezhao He
- 申请人： The 13th Research Institute Of China Electronics Technology Group Corporation
- 申请人地址： CN Shijiazhuang
- 专利权人： The 13ᵗʰ Research Institute Of China Electronics Technology Group Corporation
- 当前专利权人： The 13ᵗʰ Research Institute Of China Electronics Technology Group Corporation
- 当前专利权人地址： CN Shijiazhuang
- 优先权： CN201710948671 20171012
- 主分类号： H01L29/267
- IPC分类号： H01L29/267 ; H01L29/66 ; H01L21/02 ; H01L29/10 ; H01L21/66
摘要：
The present application discloses a semiconductor device and a method for forming an n-type conductive channel in a diamond using a heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method comprises: forming a diamond layer on a substrate; and depositing a ternary compound having a donor characteristic and graded components on an upper surface of the diamond layer to form a first donor layer, forming a graded heterojunction at an interface between the diamond layer and the first donor layer, forming two-dimensional electron gas at one side of the diamond layer adjacent to the graded heterojunction, and using the two-dimensional electron gas as the n-type conductive channel. The method enables a concentration and a mobility of carriers in the n-type diamond channel to reach 1013 cm−2 and 2000 cm2/V·s respectively.
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