- 专利标题： Reduction in the annealing temperature of an IGZO layer obtained by sol gel
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申请号： US15905359申请日： 2018-02-26
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公开(公告)号： US10381220B2公开(公告)日： 2019-08-13
- 发明人: Mohammed Benwadih , Christine Revenant-Brizard
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, McClelland, Mauer & Neustadt, L.L.P.
- 优先权： FR1715675 20170301
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/786 ; H01L29/24
摘要：
The present application relates to a method for forming an active zone of metal oxide for an electronic component including the formation of a stack of IXZO layers produced by liquid phase deposition on a substrate, the layers of said stack having different atomic fractions to each other in order to make it possible to reduce the annealing temperature enabling them to be made functional.
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