Invention Grant
- Patent Title: Integrated circuit and method of forming an integrated circuit
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Application No.: US15682885Application Date: 2017-08-22
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Publication No.: US10380315B2Publication Date: 2019-08-13
- Inventor: Hui-Zhong Zhuang , Ting-Wei Chiang , Lee-Chung Lu , Li-Chun Tien , Shun Li Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/02 ; H01L27/118

Abstract:
An IC structure includes a cell, a first rail and a second rail. The cell includes a first and a second active region and a first gate structure. The first and second active region extend in a first direction and is located at a first level. The second active region is separated from the first active region in a second direction. The first gate structure extends in the second direction, overlaps the first and second active region, and is located at a second level. The first rail extends in the first direction, overlaps the first active region, is configured to supply a first supply voltage, and is located at a third level. The second rail extends in the first direction, overlaps the second active region, is located at the third level, separated from the first rail in the second direction, and is configured to supply a second supply voltage.
Public/Granted literature
- US20180075182A1 INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT Public/Granted day:2018-03-15
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