Low temperature poly silicon backboard, method for manufacturing the same and light-emitting device
Abstract:
The present disclosure provides a Low Temperature Poly Silicon (LTPS) backboard, a method for manufacturing the LTPS, and a light-emitting device. The LTPS backboard includes: a base substrate, and a thin film transistor (TFT) and a light blocking layer that are arranged above the base substrate, wherein the light blocking layer is arranged above the TFT, and the light blocking layer is configured for preventing an irradiation light from irradiating onto the TFT.
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