发明授权
- 专利标题： Method for producing III-N templates and the reprocessing thereof and III-N template
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申请号： US14386845申请日： 2013-03-21
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公开(公告)号： US10309037B2公开(公告)日： 2019-06-04
- 发明人: Frank Lipski , Ferdinand Scholz , Martin Klein , Frank Habel
- 申请人： FREIBERGER COMPOUND MATERIALS GMBH
- 申请人地址： DE Freiberger
- 专利权人： Freiberger Compound Materials GMBH
- 当前专利权人： Freiberger Compound Materials GMBH
- 当前专利权人地址： DE Freiberger
- 代理机构： A.C. Entis-IP Ltd.
- 代理商 Kenichi N. Hartman; Allan C. Entis
- 优先权： DE102012204551 20120321; DE102012204553 20120321
- 国际申请： PCT/EP2013/055892 WO 20130321
- 国际公布： WO2013/139888 WO 20130926
- 主分类号： C30B25/16
- IPC分类号： C30B25/16 ; C30B29/40 ; H01L21/02 ; C30B25/10 ; C30B25/04 ; H01L29/20 ; C30B25/18
摘要：
The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
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