- 专利标题： Dual cavity pressure structures
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申请号： US15636463申请日： 2017-06-28
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公开(公告)号： US10308503B2公开(公告)日： 2019-06-04
- 发明人: Jong Il Shin , Peter Smeys , Daesung Lee
- 申请人： InvenSense, Inc.
- 申请人地址： US CA San Jose
- 专利权人： InvenSense, Inc.
- 当前专利权人： InvenSense, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： B81B7/02
- IPC分类号： B81B7/02 ; B81C1/00 ; G01P15/08
摘要：
An apparatus includes a cavity within a substrate. A MEMS structure is within the cavity, wherein the cavity includes the MEMS structure. A trench is connected to the cavity, wherein the trench is not directly opposite the MEMS structure. An oxide layer lines the trench and the cavity. A seal layer seals the trench and traps a predetermined pressure within the cavity and the trench.
公开/授权文献
- US20170297909A1 DUAL CAVITY PRESSURE STRUCTURES 公开/授权日：2017-10-19
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