An integrated circuit device includes a substrate, a gate structure, a spacer structure, a source/drain region, and a first contact structure. The substrate includes a fin-type active region. The gate structure intersects with the fin-type active region on the substrate, and has two sides and two side walls. The spacer structure is disposed on both side walls of the gate structure and includes a first spacer layer contacting at least a portion of both side walls of the gate structure and a second spacer layer disposed on the first spacer layer and having a lower dielectric constant than a dielectric constant of the first spacer layer. The source/drain region is disposed on both sides of the gate structure. The first contact structure is electrically connected to the source/drain region and includes a first contact plug disposed on the source/drain region and a first metallic capping layer disposed on the first contact plug.