- 专利标题： Light-emitting diode epitaxial wafer and method for preparing the same
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申请号： US15719609申请日： 2017-09-29
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公开(公告)号： US10276744B2公开(公告)日： 2019-04-30
- 发明人: Xianghua Lu , Lijun Xia , Jiahui Hu , Shizhen Wei
- 申请人： HC SEMITEK (SUZHOU) CO., LTD.
- 申请人地址： CN Suzhou
- 专利权人： HC SEMITEK (SUZHOU) CO., LTD.
- 当前专利权人： HC SEMITEK (SUZHOU) CO., LTD.
- 当前专利权人地址： CN Suzhou
- 代理机构： Matthias Scholl, PC
- 代理商 Matthias Scholl
- 优先权： CN201510141885 20150330
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/06 ; H01L33/12 ; H01L33/32
摘要：
A light-emitting diode epitaxial wafer, including: a substrate; and a buffer layer, an undoped GaN layer, an n-type GaN contact layer, a multi-quantum well layer, and a p-type GaN contact layer, which are sequentially laminated on the substrate in that order. The multi-quantum well layer includes GaN barrier layers and at least one InxGa1-xN well layer, where 0
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