Invention Grant
- Patent Title: Binary high-power modulator
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Application No.: US15382517Application Date: 2016-12-16
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Publication No.: US10270488B2Publication Date: 2019-04-23
- Inventor: Harry B. Marr , Victor S. Reinhardt , John P. Gianvittorio
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H04B1/04
- IPC: H04B1/04 ; H04B1/7176 ; H04B1/717 ; H04B1/719 ; H04L27/20 ; H04B1/707 ; G01S13/84

Abstract:
System and method for signal modulation. In one embodiment, a circuit includes a channel for carrying an analog RF signal, a phase offset circuit on the channel, and configured to receive a phase code for modifying the analog RF signal to produce a modified RF signal, and a feedforward cancellation path coupled in parallel to the phase offset circuit for canceling a portion of the modified analog signal.
Public/Granted literature
- US20180175907A1 BINARY HIGH-POWER MODULATOR Public/Granted day:2018-06-21
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