- 专利标题: BSI image sensor and method of forming same
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申请号: US15905033申请日: 2018-02-26
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公开(公告)号: US10269843B2公开(公告)日: 2019-04-23
- 发明人: Hung-Wen Hsu , Jiech-Fun Lu , Yeur-Luen Tu , U-Ting Chen , Shu-Ting Tsai , Hsiu-Yu Cheng
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.
公开/授权文献
- US20180197903A1 BSI Image Sensor and Method of Forming Same 公开/授权日:2018-07-12
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