Invention Grant
- Patent Title: Interfused nanocrystals and method of preparing the same
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Application No.: US15581041Application Date: 2017-04-28
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Publication No.: US10202545B2Publication Date: 2019-02-12
- Inventor: Shin Ae Jun , Eun Joo Jang , Seong Jae Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2004-0091894 20041111; KR10-2005-0079284 20050829
- Main IPC: H01L51/50
- IPC: H01L51/50 ; B82Y30/00 ; C30B7/14 ; C09K11/02 ; C09K11/56 ; C30B29/60 ; B82Y20/00 ; C01B19/00 ; H05B33/14 ; B82Y40/00

Abstract:
Disclosed herein is a nanocrystal comprising a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core.
Public/Granted literature
- US20170237029A1 INTERFUSED NANOCRYSTALS AND METHOD OF PREPARING THE SAME Public/Granted day:2017-08-17
Information query
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