- 专利标题: Memory decoding system
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申请号: US15860268申请日: 2018-01-02
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公开(公告)号: US10176854B2公开(公告)日: 2019-01-08
- 发明人: Guangyan Luo , Hao Ni , Chuntian Yu , Xiaoyan Liu
- 申请人: Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址: CN Shanghai
- 专利权人: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人地址: CN Shanghai
- 代理机构: Anova Law Group, PLLC
- 优先权: CN201510546373 20150831
- 主分类号: G11C8/00
- IPC分类号: G11C8/00 ; G11C7/12 ; G11C11/4094 ; G11C11/4096 ; G11C7/14 ; G11C8/10
摘要:
A memory decoding system includes a memory decoding reference current module. The memory decoding reference current module includes: a first reference current unit connected to one end of a second reference bit line; a second reference current unit connected to one end of a first reference bit line; a third reference current unit connected to one end of a third reference bit line; a first reference NMOS transistor, a source of which is connected to the second reference bit line; a second reference NMOS transistor, a source of which is connected to a drain of the first reference NMOS transistor; and a gate of the first reference NMOS transistor and a gate of the second NMOS transistor are connected to a logic high level.
公开/授权文献
- US20180122437A1 MEMORY DECODING SYSTEM 公开/授权日:2018-05-03
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