- 专利标题： Memory device and method for manufacturing the same
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申请号： US15684306申请日： 2017-08-23
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公开(公告)号： US10157964B2公开(公告)日： 2018-12-18
- 发明人: Kiyohito Nishihara
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
A memory device according to one embodiment includes a resistance change film, an insulating film provided on the resistance change film, a first wiring provided on the insulating film and being not in contact with the resistance change film, and a high resistance film having a higher resistivity than the first wiring. The high resistance film is provided on a side surface of a stacked body including the insulating film and the first wiring, and the high resistance film is electrically connected between the first wiring and the resistance change film.
公开/授权文献
- US20170352705A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 公开/授权日：2017-12-07
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IPC分类:
