发明授权
- 专利标题: Metal via structure
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申请号: US15807583申请日: 2017-11-09
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公开(公告)号: US10157836B2公开(公告)日: 2018-12-18
- 发明人: Dyi-Chung Hu
- 申请人: Dyi-Chung Hu
- 代理机构: JCIPRNET
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L23/522
摘要:
A fabrication process including the following steps for making a metal via structure is disclosed. A substrate with at least a metal pad configured thereon is prepared. A first dielectric layer configured on a top surface of the substrate has a first opening exposing a top surface of the metal pad. A patterned first photoresist having a second opening aligned with the first opening is applied on a top surface of the first dielectric layer. A first metal evaporation is performed to form a first adhesive layer conformably distributed on a wall surface of the first opening and on a top surface of the exposed area of the metal pad. A second metal evaporation is performed to form a first metal block. The first photoresist is stripped. The first metal block is flattened to have a top surface coplanar with a top surface of the first dielectric layer.
公开/授权文献
- US20180068943A1 METAL VIA STRUCTURE 公开/授权日:2018-03-08
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