Provided is a method for manufacturing an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration by a sputtering method. The method comprises the steps of cleaving pellets and aggregates of atoms from a sputtering target containing indium, an element M (aluminum, gallium, yttrium, or tin), and zinc, depositing the pellets and the aggregates of atoms on a substrate, and then filling a gap between the pellets by the aggregates of atoms with lateral growths.