- 专利标题: Fin diode with increased junction area
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申请号: US15686523申请日: 2017-08-25
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公开(公告)号: US10056368B2公开(公告)日: 2018-08-21
- 发明人: Kasun Anupama Punchihewa , Jagar Singh
- 申请人: GLOBALFOUNDRIES Inc.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Amerson Law Firm, PLLC
- 主分类号: H01L27/06
- IPC分类号: H01L27/06 ; H01L21/265 ; H01L29/06 ; H01L29/861 ; H01L29/66 ; H01L21/8234 ; H01L27/08
摘要:
A diode includes a plurality of fins defined in a semiconductor substrate. An anode region is defined by a doped region in a first surface portion of each of the plurality of fins and in a second surface portion of the semiconductor substrate disposed between adjacent fins in the plurality of fins. The doped region includes a first dopant having a first conductivity type and is contiguous between the adjacent fins. A cathode region is defined by an inner portion of each of the plurality of fins positioned below and contacting the first surface portion and a third portion of the semiconductor substrate positioned below and contacting the second surface portion. The cathode region is contiguous and the dopants in the cathode region and anode region have opposite conductivity types. A junction is defined between the anode region and the cathode region. A first contact interfaces with the anode region.
公开/授权文献
- US20180006019A1 FIN DIODE WITH INCREASED JUNCTION AREA 公开/授权日:2018-01-04
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