- 专利标题: Methods and systems to improve yield in multiple chips integration processes
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申请号: US15296829申请日: 2016-10-18
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公开(公告)号: US10056363B2公开(公告)日: 2018-08-21
- 发明人: Runzi Chang , Winston Lee
- 申请人: Marvell World Trade Ltd.
- 申请人地址: BB St. Michael
- 专利权人: Marvell World Trade Ltd.
- 当前专利权人: Marvell World Trade Ltd.
- 当前专利权人地址: BB St. Michael
- 主分类号: H01L25/18
- IPC分类号: H01L25/18 ; H01L21/28 ; H01L21/322 ; H01L21/56 ; H01L21/67 ; H01L25/00 ; H01L27/108 ; H01L23/00
摘要:
The present disclosure includes systems and techniques relating to methods and systems that improve yield in multiple chips integration processes. In some implementations, a method includes providing, in a chamber, a first integrated circuit chip and a second integrated circuit chip supported on a carrier, flowing a molding compound to cover the first integrated circuit chip, the second integrated circuit chip, and the carrier; and flowing a forming gas into the chamber while curing the molding compound.
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