- 专利标题: High density chip-to-chip connection
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申请号: US14329717申请日: 2014-07-11
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公开(公告)号: US10056352B2公开(公告)日: 2018-08-21
- 发明人: Thorsten Meyer
- 申请人: Intel IP Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel IP Corporation
- 当前专利权人: Intel IP Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L25/10 ; H01L23/538 ; H01L23/52 ; H01L23/00 ; H01L21/56
摘要:
An apparatus includes at least a first IC die and a second IC die. Bottom surfaces of the first and second IC dice include a first plurality of connection pads and top surfaces of the first and second IC dice include a second plurality of connection pads. The apparatus also includes a layer of non-conductive material covering the top surfaces of the first and second IC dice, a plurality of through-vias, first conductive interconnect between at least a portion of the first plurality of connection pads and at least one through via, and second conductive interconnect on a top surface of the layer of non-conductive material that provides electrical continuity between at least a portion of the second plurality of connection pads and at least one through-via of the plurality of through-vias.
公开/授权文献
- US20160013153A1 HIGH DENSITY CHIP-TO-CHIP CONNECTION 公开/授权日:2016-01-14
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