Invention Grant
- Patent Title: Enhanced defect reduction for heteroepitaxy by seed shape engineering
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Application No.: US15395805Application Date: 2016-12-30
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Publication No.: US10043663B2Publication Date: 2018-08-07
- Inventor: Cheng-Wei Cheng , David L. Rath , Devendra K. Sadana , Kuen-Ting Shiu , Brent A. Wacaser
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/02 ; C30B23/02 ; C30B25/18 ; C30B25/04 ; C30B23/04 ; C30B29/40 ; C30B29/52 ; H01L29/66 ; H01L29/04
Abstract:
A heteroepitaxially grown structure includes a substrate and a mask including a high aspect ratio trench formed on the substrate. A cavity is formed in the substrate having a shape with one or more surfaces and including a resistive neck region at an opening to the trench. A heteroepitaxially grown material is formed on the substrate and includes a first region in or near the cavity and a second region outside the first region wherein the second region contains fewer defects than the first region.
Public/Granted literature
- US20170140919A1 ENHANCED DEFECT REDUCTION FOR HETEROEPITAXY BY SEED SHAPE ENGINEERING Public/Granted day:2017-05-18
Information query
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