- 专利标题: Method for collapse-free drying of high aspect ratio structures
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申请号: US14730457申请日: 2015-06-04
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公开(公告)号: US10008396B2公开(公告)日: 2018-06-26
- 发明人: Stephen Sirard , Ratchana Limary
- 申请人: LAM RESEARCH CORPORATION
- 申请人地址: US CA Fremont
- 专利权人: LAM RESEARCH CORPORATION
- 当前专利权人: LAM RESEARCH CORPORATION
- 当前专利权人地址: US CA Fremont
- 主分类号: F26B3/34
- IPC分类号: F26B3/34 ; H01L21/67 ; H01L21/02
摘要:
A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.
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