The utility model provides a silica -based monolithic integrated laser, include: 1 )In SOI surface of the substrate preparation figure mask, 2 )Sculpture top layer silicon and bury oxygen ambient silica layer forms until the limit of substrate silicon to the structure, 3 )Growth ge epitaxial layer in the limit is to the structure, 4 ) epitaxial growth III on the ge epitaxial layer V clan material, control ge thickness and III the thickness of V clan material for III the luminescent layer of V clan material and top layer silicon layer rigid alignment on the direction of height of SOI substrate. The utility model discloses is the bottom silicon that utilizes the SOI material as the substrate, through ge as transition layer, realization III the technology of directly extending on the silicon of V clan material, design ge's thickness and III is III realized to the thickness of V clan material the luminescent layer of V clan material and top layer silicon 's alignment for III V clanlaser instrument and silicon photonic device rigid alignment on the direction of height, do you realize III through technologies such as photoetching, sculptures V clan laser instrument is aimed at with other silicon photonic device high accuracy on the horizontal direction. Additionally, the utility model discloses can improve the thermal diffusivity ability of laser instrument.