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发明授权
CN1913158B 半导体器件及其制造方法 有权

半导体器件及其制造方法
摘要：
本发明涉及一种半导体器件及其制造方法。半导体器件1包括绝缘中间层10、互连部分12a到12c、绝缘中间层20以及电容器元件30。在绝缘中间层10和互连部分12a到12d上，经由扩散阻挡层40提供绝缘中间层20。在绝缘中间层20上提供电容器元件30。电容器元件30是MIM型电容器元件，并且包括位于绝缘中间层20上的下部电极32、位于下部电极32上的电容器绝缘层34、以及位于电容器绝缘层34上的上部电极36。在绝缘中间层20和电容器元件30之间的分界面S1大体上是平的。绝缘中间层20的下表面S2在与电容器绝缘层34对应的位置处包括不平坦部分。
摘要（英）：

The invention relates to semiconductor device and its production method. The semiconductor device 1 includes an insulating interlayer 10, interconnects 12 a to 12 c, an insulating interlayer 20, and a capacitor element 30. On the insulating interlayer 10 and the interconnects 12 a to 12 d, the insulating interlayer 20 is provided via a diffusion barrier 40. On the insulating interlayer 20, the capacitor element 30 is provided. The capacitor element 30 is a MIM type capacitor element, and includes a lower electrode 32 provided on the insulating interlayer 20, a capacitor insulating layer 34 provided on the lower electrode 32, and an upper electrode 36 provided on the capacitor insulating layer 34. The interface S 1 between the insulating interlayer 20 and the capacitor element 30 is generally flat. The lower face S 2 of the insulating interlayer 20 includes an uneven portion at a position corresponding to the capacitor insulating layer 34.

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