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发明授权
CN1905233B 薄膜晶体管基板及其制备方法 有权 转让

薄膜晶体管基板及其制备方法
摘要：
本发明涉及薄膜晶体管基板，包括：绝缘基板；源极和漏极，它们形成在绝缘基板上并且彼此分离，并且在它们之间具有沟道区；壁，所述壁分别暴露至少部分源极和漏极，环绕沟道区和由含氟聚合物形成；和在壁内部形成的有机半导体层。因此本发明提供其中有机半导体层被平面化的TFT基板。此外，本发明还提供制备有机半导体层被平面化的TFT基板。
摘要（英）：

The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

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