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发明授权
CN1777977B 成膜方法 失效 - 权利终止

成膜方法
摘要：
本发明提供一种在Si晶片(1)上形成硅化钛膜(4)的成膜方法。首先，通过使用高频的等离子体处理Si晶片(1)。接着，向通过等离子体处理的含Si部分上供给含Ti原料气体，生成等离子体，进行Ti成膜，通过此时的Ti膜与含Si部分的Si反应，生成硅化钛膜(4)。Si晶片(1)的等离子体处理，是向Si晶片(1)上施加绝对值在200V以上的DC偏置电压(Vdc)而进行的。
摘要（英）：

A titanium silicide film (4) is formed on an Si wafer (1). First, an Si wafer (1) is processed by plasma using high frequency wave. Next, a Ti-containing material gas is supplied onto the plasma-processed Si-containing portion to generate plasma and form a Ti film, and a titanium silicide film (4) is formed by the reaction between the formed Ti film and Si in the Si-containing portion. The Si wafer (1) is plasma-processed while a DC bias voltage (Vdc) of at least 200 V in absolute value is being applied to the Si wafer (1).

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