知搜-全球专利检索

  1. 登录
  2. 注册
发明授权
CN1697082B 编程相变型存储器阵列到置位状态的方法及存储器件电路 有权

编程相变型存储器阵列到置位状态的方法及存储器件电路
摘要：
一种编程相变型存储器阵列的方法和一种相变型存储器件的电路，所述阵列和存储器件都具有多个相变型存储单元，该方法和器件可以使其中所有的相变型存储单元被改变或者设置为置位电阻状态，并且可以减少将该相变型存储器阵列改变为置位电阻状态所需的时间。在这个方法中，可以将具有第一到第n等级的置位电流脉冲施加于该阵列的单元以将这些单元改变为置位电阻状态。按任何等级的施加于相变型存储单元的置位电流脉冲的最小电流电平可以高于该阵列的单元的基准电流电平。置位电流脉冲的指定电流电平可以按顺序逐个等级减小。
摘要（英）：

A method for programming a phase-change memory array and circuit of a phase-change memory device, each having a plurality of phase-change memory cells, may enable all the phase-change memory cells therein to be changed or set at a set resistance state, and may reduce the time needed to change the phase-change memory array to the set resistance state. In the method, a set current pulse having first through nth stages may be applied to the cells of the array to change the cells to the set resistance state. A minimum current level of the set current pulse applied to the phase-change memory cells in any stage may be higher than a reference current level for the cells of the array. A given current level of the set current pulse may be sequentially reduced from stage to stage.

公开/授权文献
0/0