A flash memory array having multiple dual bit memory cells (10, 210, 212, 214, 216, 220, 222) divided into section attached to a wordline (12, 202, 208) and a pair of reference cells (218) logically associated with each section. A method of reprogramming a section or sections of words that are required to be changed includes inputting allowed changes to the flash memory array, reading word or words to be changed in each section, programming bits in word or words to be changed in each section, refreshing previously programmed bits in the word or words that are changed, refreshing previously programmed bits in the word or words changed in each section, refreshing previously programmed bits in the remaining word or words in each section and refreshing previously programmed in each pair of reference cells (10, 210, 212, 214, 216, 220, 222) in the section in which changes have been made.