A method for forming metal capacitors by inlaying process and its products. Before a metal film capacitor is formed, an interconnector under the capacitor is made by copper inlaying process, an insulating layer with an opening is deposited, then in turn the first metal layer, a dielectrical layer and the second metal layer are deposited, and finally the unnecessary three layers covering the opening are removed by chemically mechanical grinding process till the insulating layer is exposed, i.e.a capacitor is formed in the opening. After that, the copper inlaying process is used again to make the interconnector above the capacitor. The advantages lie in that the size of the IC of the included capacitor is easily reduced, the microshadow etching steps are reduced, the cost is low, and the drop height between the capacitor region and non-capacitor region is decreased.